JANTXV2N6901
- Mfr.Part #
- JANTXV2N6901
- Manufacturer
- Microsemi
- Package / Case
- TO-205AF Metal Can
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1.69A TO205AF
- Stock
- 11,950
- In Stock :
- 11,950
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-205AF Metal Can
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 2
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 5V
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 45 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 25 ns
- Reference Standard :
- MIL-19500/570B
- Terminal Form :
- Wire
- Power Dissipation-Max :
- 8.33W Tc
- Gate to Source Voltage (Vgs) :
- 10V
- Published :
- 1997
- Vgs (Max) :
- ±10V
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 1.69A
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- Military, MIL-PRF-19500/570
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Current - Continuous Drain (Id) @ 25°C :
- 1.69A Tc
- RoHS Status :
- Non-RoHS Compliant
- DS Breakdown Voltage-Min :
- 100V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 80 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Rise Time :
- 80ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 1.07A, 5V
- Qualification Status :
- Qualified
- Datasheets
- JANTXV2N6901
N-Channel Bulk 1.4 Ω @ 1.07A, 5V ±10V 5nC @ 5V 100V TO-205AF Metal Can
JANTXV2N6901 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.69A amps.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V).
JANTXV2N6901 Features
a continuous drain current (ID) of 1.69A
the turn-off delay time is 45 ns
a 100V drain to source voltage (Vdss)
JANTXV2N6901 Applications
There are a lot of Microsemi Corporation
JANTXV2N6901 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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