JANTXV2N6798U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

MIL-19500/557

RoHS Status :

Non-RoHS Compliant

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Turn-Off Delay Time :

50 ns

JESD-30 Code :

R-CQCC-N15

Series :

Military, MIL-PRF-19500/557

Number of Elements :

1

Packaging :

Bulk

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Power Dissipation-Max :

800mW Ta 25W Tc

Pulsed Drain Current-Max (IDM) :

22A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

Continuous Drain Current (ID) :

5.5A

Qualification Status :

Qualified

Number of Terminations :

15

Avalanche Energy Rating (Eas) :

98 mJ

Drain-source On Resistance-Max :

0.42Ohm

Rise Time :

50ns

Mounting Type :

Surface Mount

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

18-CLCC

Pbfree Code :

No

JESD-609 Code :

e0

Fall Time (Typ) :

40 ns

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

420m Ω @ 5.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

QUAD

Pin Count :

18

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

42.07nC @ 10V