JANTXV2N6790

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

200V

JESD-30 Code :

O-MBCY-W3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Wire

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain-source On Resistance-Max :

0.8Ohm

Terminal Position :

BOTTOM

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.5A, 10V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

200V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.5A

Qualification Status :

Qualified

Packaging :

Bulk

Number of Elements :

1

Transistor Element Material :

SILICON

Reference Standard :

MILITARY STANDARD (USA)

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

800mW Tc

Package / Case :

TO-205AF Metal Can

JEDEC-95 Code :

TO-39

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

RADIATION HARDENED

Pulsed Drain Current-Max (IDM) :

14A

Series :

Military, MIL-PRF-19500/555

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997