JANTX2N3634

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Mfr.Part #
JANTX2N3634
Manufacturer
onsemi
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 140V 1A
Stock
40,916
In Stock :
40,916

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
23 Weeks
Radiation Hardening :
No
Terminal Finish :
Tin/Lead (Sn/Pb)
ECCN Code :
EAR99
RoHS Status :
Non-RoHS Compliant
Number of Terminations :
3
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
140V
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Package / Case :
TO-205AD, TO-39-3 Metal Can
Terminal Position :
BOTTOM
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
Military, MIL-PRF-19500/357
Number of Elements :
1
Qualification Status :
Qualified
Number of Pins :
3
Configuration :
Single
Turn On Time-Max (ton) :
200ns
JESD-609 Code :
e0
Published :
2002
Pbfree Code :
No
Current - Collector Cutoff (Max) :
10μA
Max Power Dissipation :
1W
Collector Emitter Voltage (VCEO) :
140V
Turn Off Time-Max (toff) :
650ns
Terminal Form :
Wire
Transition Frequency :
150MHz
Operating Temperature :
-65°C~200°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA 10V
Pin Count :
2
Mounting Type :
Through Hole
Power Dissipation :
1W
Transistor Element Material :
SILICON
Max Collector Current :
1A
Emitter Base Voltage (VEBO) :
5V
Mount :
Through Hole
Packaging :
Bulk
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Transistor Type :
PNP
Datasheets
JANTX2N3634
Introducing Transistors - Bipolar (BJT) - Single onsemi JANTX2N3634 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, JANTX2N3634 pinout, JANTX2N3634 datasheet PDF, JANTX2N3634 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi JANTX2N3634 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JANTX2N3634 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

JANTX2N3634 Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


JANTX2N3634 Applications


There are a lot of Microsemi Corporation
JANTX2N3634 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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