JAN2N6770T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Continuous Drain Current (ID) :

12A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Qualified

Radiation Hardening :

No

ECCN Code :

EAR99

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

500V

Terminal Form :

PIN/PEG

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

4W Ta 150W Tc

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Reference Standard :

MIL-19500

Number of Pins :

3

Number of Elements :

1

Drain-source On Resistance-Max :

0.5Ohm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Case Connection :

Isolated

Series :

Military, MIL-PRF-19500/543