JAN2N6770

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/543

Mounting Type :

Through Hole

Turn On Time-Max (ton) :

225ns

Terminal Form :

PIN/PEG

Turn Off Time-Max (toff) :

300ns

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

48A

Rise Time :

190ns

Terminal Position :

BOTTOM

Contact Plating :

Lead, Tin

JESD-30 Code :

O-MBFM-P2

Mount :

Through Hole

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

4W Ta 150W Tc

Packaging :

Bulk

Pin Count :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-204AE

Published :

1997

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

JEDEC-95 Code :

TO-204AA

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Qualification Status :

Qualified

Case Connection :

DRAIN

Continuous Drain Current (ID) :

12A

Avalanche Energy Rating (Eas) :

750 mJ

Factory Lead Time :

36 Weeks

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Pbfree Code :

No

Power Dissipation :

4W

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.4Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA