JAN2N6768

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

400V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

FET Type :

N-Channel

Package / Case :

TO-204AE

Number of Elements :

1

JESD-609 Code :

e0

Terminal Form :

PIN/PEG

Series :

Military, MIL-PRF-19500/543

JESD-30 Code :

O-MBFM-P2

Terminal Position :

BOTTOM

Pulsed Drain Current-Max (IDM) :

56A

Qualification Status :

Qualified

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

190ns

Number of Pins :

3

Published :

1997

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

700 mJ

Reference Standard :

MIL-19500

Power Dissipation-Max :

4W Ta 150W Tc

Pin Count :

2

Pbfree Code :

No

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

35 ns

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

SWITCHING

Fall Time (Typ) :

130 ns

Continuous Drain Current (ID) :

14A

Rds On (Max) @ Id, Vgs :

400m Ω @ 14A, 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Packaging :

Bulk

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

170 ns

JEDEC-95 Code :

TO-204AA

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

400V