JAN2N4449

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e0

Package / Case :

TO-206AB, TO-46-3 Metal Can

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Qualification Status :

Qualified

Reference Standard :

MIL-19500

Number of Pins :

3

Lifecycle Status :

IN PRODUCTION (Last Updated: 4 weeks ago)

Series :

Military, MIL-PRF-19500/317

Power - Max :

360mW

HTS Code :

8541.21.00.95

Voltage - Collector Emitter Breakdown (Max) :

20V

Configuration :

Single

Collector Emitter Voltage (VCEO) :

15V

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

400nA

Pbfree Code :

No

Case Connection :

COLLECTOR

Transistor Type :

NPN

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

Mount :

Through Hole

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Max Power Dissipation :

600mW

Factory Lead Time :

23 Weeks

Turn On Time-Max (ton) :

12ns

Published :

2007

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Wire

ECCN Code :

EAR99

Packaging :

Bulk

Turn Off Time-Max (toff) :

18ns

Transistor Application :

SWITCHING

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Terminal Position :

BOTTOM

RoHS Status :

Non-RoHS Compliant