JAN2N3960

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Mfr.Part #
JAN2N3960
Manufacturer
Microsemi
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 12V TO18
Stock
20,232
In Stock :
20,232

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Number of Elements :
1
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Number of Pins :
3
JESD-609 Code :
e0
Collector Base Voltage (VCBO) :
20V
RoHS Status :
Non-RoHS Compliant
Packaging :
Bulk
HTS Code :
8541.21.00.95
Configuration :
Single
Terminal Form :
Wire
Power - Max :
400mW
Package / Case :
TO-206AA, TO-18-3 Metal Can
Mount :
Through Hole
Operating Temperature :
-65°C~200°C TJ
Series :
Military, MIL-PRF-19500/399
Vce Saturation (Max) @ Ib, Ic :
300mV @ 3mA, 30mA
Collector Emitter Voltage (VCEO) :
12V
Published :
2007
Mounting Type :
Through Hole
Terminal Finish :
TIN LEAD
Terminal Position :
BOTTOM
Radiation Hardening :
No
Max Power Dissipation :
400mW
Transistor Element Material :
SILICON
Pbfree Code :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 1V
Transistor Type :
NPN
Number of Terminations :
3
Current - Collector Cutoff (Max) :
10μA ICBO
Pin Count :
3
Datasheets
JAN2N3960
Introducing Transistors - Bipolar (BJT) - Single Microsemi JAN2N3960 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-206AA, TO-18-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Number of Terminations:3, JAN2N3960 pinout, JAN2N3960 datasheet PDF, JAN2N3960 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JAN2N3960 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microsemi JAN2N3960


NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole

JAN2N3960 Overview


This device has a DC current gain of 60 @ 10mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 3mA, 30mA means Ic has reached its maximum value(saturated).

JAN2N3960 Features


the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 300mV @ 3mA, 30mA


JAN2N3960 Applications


There are a lot of Microsemi Corporation
JAN2N3960 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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