IXTT60N10

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Mfr.Part #
IXTT60N10
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 60A TO268
Stock
24,079
In Stock :
24,079

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
FET Feature :
--
Avalanche Energy Rating (Eas) :
1500 mJ
FET Type :
N-Channel
Qualification Status :
Not Qualified
Rise Time :
20ns
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
100V
Packaging :
Tube
Subcategory :
MOSFETs
Number of Channels :
1 Channel
Power Dissipation :
300W
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Number of Terminations :
2
Turn-Off Delay Time :
70 ns
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
20m Ω @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Series :
--
Channel Mode :
Enhancement
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
80A
Surface Mount :
yes
Package Shape :
RECTANGULAR
Length :
16.05 mm
Drain-source On Resistance-Max :
0.02Ohm
Continuous Drain Current (ID) :
60A
Width :
14 mm
Pulsed Drain Current-Max (IDM) :
320A
Number of Elements :
1
Power Dissipation (Max) :
300W (Tc)
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
100V
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTT60
Mounting Style :
SMD/SMT
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Brand :
IXYS
Published :
2003
RoHS Status :
ROHS3 Compliant
Pin Count :
4
Product Type :
MOSFET
Number of Terminals :
2
Maximum Operating Temperature :
+ 150 C
Package :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Form :
Gull wing
Reach Compliance Code :
not_compliant
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max :
300W Tc
Supplier Device Package :
TO-268
JEDEC-95 Code :
TO-268AA
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Manufacturer :
IXYS
Terminal Position :
Single
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Height :
5.1 mm
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Transistor Polarity :
N-Channel
Fall Time (Typ) :
18 ns
Pbfree Code :
yes
Mount :
Surface Mount
Transistor Application :
SWITCHING
Product Status :
Active
DS Breakdown Voltage-Min :
100 V
Datasheets
IXTT60N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT60N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, IXTT60N10 pinout, IXTT60N10 datasheet PDF, IXTT60N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT60N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT60N10


N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT60N10 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 3200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.Its drain current is 80A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT60N10 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)


IXTT60N10 Applications


There are a lot of IXYS
IXTT60N10 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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