IXTP96P085T
- Mfr.Part #
- IXTP96P085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 85V 96A TO220AB
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.013 Ω
- Pin Count :
- 3
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Mounting Style :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- -85V
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 96A
- Transistor Polarity :
- P-Channel
- Power Dissipation-Max (Abs) :
- 298 W
- Series :
- TrenchP™
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 85 V
- Product Status :
- Active
- Power Dissipation-Max :
- 298W Tc
- Continuous Drain Current Id :
- 96A
- Drain to Source Voltage (Vdss) :
- 85V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- P-Channel
- Factory Lead Time :
- 24 Weeks
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 298W
- Package / Case :
- TO-220-3
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 15V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±15V
- FET Type :
- P-Channel
- Supplier Device Package :
- TO-220AB
- RoHS :
- Details
- JESD-609 Code :
- e3
- Published :
- 2010
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Channel Type :
- P Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 P-Channel
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 48A, 10V
- Terminal Finish :
- PURE TIN
- Rise Time :
- 34 ns
- Configuration :
- Single
- Product Type :
- MOSFET
- Terminal Position :
- Single
- FET Feature :
- --
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Qualification :
- -
- Brand :
- IXYS
- Base Product Number :
- IXTP96
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Power Dissipation (Max) :
- 298W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 96 A
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Datasheets
- IXTP96P085T

P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-220-3
IXTP96P085T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 13100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 96 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP96P085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
based on its rated peak drain current 300 A.
a 85V drain to source voltage (Vdss)
IXTP96P085T Applications
There are a lot of IXYS
IXTP96P085T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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