IXTP96P085T

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Mfr.Part #
IXTP96P085T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 85V 96A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.013 Ω
Pin Count :
3
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Package :
Tube
Mounting Style :
Through Hole
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
-85V
Number of Terminals :
3
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Number of Pins :
3
Continuous Drain Current (ID) :
96A
Transistor Polarity :
P-Channel
Power Dissipation-Max (Abs) :
298 W
Series :
TrenchP™
Case Connection :
DRAIN
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
85 V
Product Status :
Active
Power Dissipation-Max :
298W Tc
Continuous Drain Current Id :
96A
Drain to Source Voltage (Vdss) :
85V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
P-Channel
Factory Lead Time :
24 Weeks
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
298W
Package / Case :
TO-220-3
Maximum Operating Temperature :
+ 150 C
Gate to Source Voltage (Vgs) :
15V
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±15V
FET Type :
P-Channel
Supplier Device Package :
TO-220AB
RoHS :
Details
JESD-609 Code :
e3
Published :
2010
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Channel Type :
P Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 P-Channel
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Product Category :
MOSFET
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
13m Ω @ 48A, 10V
Terminal Finish :
PURE TIN
Rise Time :
34 ns
Configuration :
Single
Product Type :
MOSFET
Terminal Position :
Single
FET Feature :
--
JEDEC-95 Code :
TO-220AB
Radiation Hardening :
No
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Qualification :
-
Brand :
IXYS
Base Product Number :
IXTP96
Avalanche Energy Rating (Eas) :
1000 mJ
Pulsed Drain Current-Max (IDM) :
300 A
Power Dissipation (Max) :
298W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Mounting Type :
Through Hole
Number of Elements :
1
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
96 A
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Datasheets
IXTP96P085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP96P085T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, IXTP96P085T pinout, IXTP96P085T datasheet PDF, IXTP96P085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP96P085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP96P085T


P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-220-3

IXTP96P085T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 13100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 96 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP96P085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
based on its rated peak drain current 300 A.
a 85V drain to source voltage (Vdss)


IXTP96P085T Applications


There are a lot of IXYS
IXTP96P085T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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