IXTK170P10P
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- Mfr.Part #
- IXTK170P10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 170A TO264
- Stock
- 4,432
- In Stock ：
- 4,432
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTK170
- Supplier Device Package :
- TO-264 (IXTK)
- Configuration :
- Single
- Lead Free :
- Lead Free
- Product Status :
- Active
- RoHS :
- Details
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 890W
- Series :
- PolarP™
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 510A
- FET Feature :
- --
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 890W (Tc)
- Package / Case :
- TO-264-3, TO-264AA
- Drain-source On Resistance-Max :
- 0.012Ohm
- Rise Time :
- 75 ns
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Packaging :
- Tube
- Transistor Polarity :
- P-Channel
- Mounting Style :
- Through Hole
- Package :
- Tube
- Pin Count :
- 3
- Mount :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- ECCN Code :
- EAR99
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Published :
- 2009
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 12600pF @ 25V
- Maximum Operating Temperature :
- + 150 C
- Factory Lead Time :
- 28 Weeks
- Drain to Source Breakdown Voltage :
- -100V
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Transistor Type :
- 1 P-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 170A
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Power Dissipation-Max :
- 890W Tc
- Datasheets
- IXTK170P10P
P-Channel Tube 12m Ω @ 500mA, 10V ±20V 12600pF @ 25V 240nC @ 10V 100V TO-264-3, TO-264AA
IXTK170P10P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 12600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 170A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-100V. And this device has -100V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 510A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTK170P10P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of -100V voltage
based on its rated peak drain current 510A.
a 100V drain to source voltage (Vdss)
IXTK170P10P Applications
There are a lot of IXYS
IXTK170P10P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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