IXTH76P10T

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Mfr.Part #
IXTH76P10T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 100V 76A TO247
Stock
13
In Stock :
13

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
TrenchP™
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation :
298W
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Rise Time :
40 ns
Rds On Max :
25 mΩ
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
230A
Vgs(th) (Max) @ Id :
4V @ 250µA
Manufacturer :
IXYS
Base Product Number :
IXTH76
Package :
Tube
Factory Lead Time :
17 Weeks
Type :
TrenchP Power MOSFET
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Case Connection :
DRAIN
Number of Terminals :
3
Continuous Drain Current (ID) :
76A
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
76 A
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
100 V
FET Feature :
--
Drain-source On Resistance-Max :
0.024Ohm
RoHS :
Compliant
Length :
16.26 mm
Input Capacitance :
13.7 nF
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
13700pF @ 25V
Drain to Source Voltage (Vdss) :
100V
Min Operating Temperature :
-55 °C
Polarity/Channel Type :
P-Channel
Gate to Source Voltage (Vgs) :
15V
Terminal Position :
Single
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150 °C
Product Status :
Active
Vgs (Max) :
±15V
Tradename :
TrenchP
JEDEC-95 Code :
TO-247
Power Dissipation (Max) :
298W (Tc)
Number of Channels :
1 Channel
Max Power Dissipation :
298 W
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-247 (IXTH)
Height :
21.46 mm
Transistor Polarity :
P-Channel
Minimum Operating Temperature :
- 55 C
Published :
2010
Width :
5.3 mm
Surface Mount :
No
Power Dissipation-Max :
298W Tc
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
25m Ω @ 500mA, 10V
Additional Feature :
AVALANCHE RATED
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Number of Elements :
1
Radiation Hardening :
No
Power Dissipation-Max (Abs) :
298 W
Brand :
IXYS
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Datasheets
IXTH76P10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH76P10T from Chip IC,where excellence meets affordability. This product stands out with its Type:TrenchP Power MOSFET, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTH76P10T pinout, IXTH76P10T datasheet PDF, IXTH76P10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH76P10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH76P10T


P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-247-3

IXTH76P10T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 13700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 76A.As shown in the table below, the drain current of this device is 76 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 230A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH76P10T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 76A
based on its rated peak drain current 230A.
a 100V drain to source voltage (Vdss)


IXTH76P10T Applications


There are a lot of IXYS
IXTH76P10T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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