IXTH76P10T
- Mfr.Part #
- IXTH76P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 76A TO247
- Stock
- 13
- In Stock :
- 13
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchP™
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Power Dissipation :
- 298W
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Rise Time :
- 40 ns
- Rds On Max :
- 25 mΩ
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 230A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Manufacturer :
- IXYS
- Base Product Number :
- IXTH76
- Package :
- Tube
- Factory Lead Time :
- 17 Weeks
- Type :
- TrenchP Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 76A
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 76 A
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 100 V
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.024Ohm
- RoHS :
- Compliant
- Length :
- 16.26 mm
- Input Capacitance :
- 13.7 nF
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 13700pF @ 25V
- Drain to Source Voltage (Vdss) :
- 100V
- Min Operating Temperature :
- -55 °C
- Polarity/Channel Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 15V
- Terminal Position :
- Single
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150 °C
- Product Status :
- Active
- Vgs (Max) :
- ±15V
- Tradename :
- TrenchP
- JEDEC-95 Code :
- TO-247
- Power Dissipation (Max) :
- 298W (Tc)
- Number of Channels :
- 1 Channel
- Max Power Dissipation :
- 298 W
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-247 (IXTH)
- Height :
- 21.46 mm
- Transistor Polarity :
- P-Channel
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2010
- Width :
- 5.3 mm
- Surface Mount :
- No
- Power Dissipation-Max :
- 298W Tc
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 500mA, 10V
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Power Dissipation-Max (Abs) :
- 298 W
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Mounting Style :
- Through Hole
- Datasheets
- IXTH76P10T
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P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-247-3
IXTH76P10T Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 13700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 76A.As shown in the table below, the drain current of this device is 76 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 230A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH76P10T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 76A
based on its rated peak drain current 230A.
a 100V drain to source voltage (Vdss)
IXTH76P10T Applications
There are a lot of IXYS
IXTH76P10T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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