IXTH3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

6A

Polarity/Channel Type :

N-Channel

Transistor Type :

1 N-Channel

FET Feature :

--

Manufacturer :

IXYS

Fall Time (Typ) :

29 ns

Power Dissipation-Max (Abs) :

125 W

Vgs (Max) :

±20V

RoHS :

Details

Transistor Application :

SWITCHING

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Published :

2008

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

4.8 Ω

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

125W Tc

Operating Temperature :

-55°C~150°C TJ

Series :

PolarVHV™

Configuration :

Single

JEDEC-95 Code :

TO-247AD

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Qualification Status :

Not Qualified

Product Type :

MOSFET

FET Type :

N-Channel

Power Dissipation :

125W

Width :

5.3 mm

JESD-609 Code :

e1

Base Product Number :

IXTH3

Avalanche Energy Rating (Eas) :

200 mJ

Product Category :

MOSFET

Turn-Off Delay Time :

75 ns

Number of Terminals :

3

DS Breakdown Voltage-Min :

1000 V

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Factory Lead Time :

28 Weeks

Rise Time :

27ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Power Dissipation (Max) :

125W (Tc)

Terminal Position :

Single

Pin Count :

3

Supplier Device Package :

TO-247 (IXTH)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pbfree Code :

yes

Height :

21.46 mm

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

1kV

Number of Elements :

1

Mount :

Through Hole

Channel Mode :

Enhancement

Brand :

IXYS

Package :

Tube

Product Status :

Active

Drain to Source Voltage (Vdss) :

1000V

Additional Feature :

AVALANCHE RATED

Length :

16.26 mm

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Number of Terminations :

3