IXTA1R4N100P

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Mfr.Part #
IXTA1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO263
Stock
110
In Stock :
110

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Power Dissipation :
63W
DS Breakdown Voltage-Min :
1000 V
Published :
2011
Power Dissipation-Max :
63W Tc
Power Dissipation-Max (Abs) :
63 W
Number of Elements :
1
Product Category :
MOSFET
Channel Mode :
Enhancement
JESD-30 Code :
R-PSSO-G2
Product Type :
MOSFET
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
1kV
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Package :
Tube
Transistor Polarity :
N-Channel
FET Feature :
--
Mounting Style :
SMD/SMT
RoHS Status :
ROHS3 Compliant
Series :
Polar™
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
3A
Surface Mount :
yes
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Length :
10.41 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Drain-source On Resistance-Max :
11 Ω
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Avalanche Energy Rating (Eas) :
100 mJ
Base Product Number :
IXTA1
Power Dissipation (Max) :
63W (Tc)
Pin Count :
4
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
1.4 A
JEDEC-95 Code :
TO-263AB
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Qualification Status :
Not Qualified
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
not_compliant
Supplier Device Package :
TO-263 (IXTA)
Transistor Type :
1 N-Channel
Terminal Form :
Gull wing
Rise Time :
35ns
Product Status :
Active
Factory Lead Time :
28 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
1000V
Turn-Off Delay Time :
65 ns
Width :
9.65 mm
Height :
4.83 mm
Number of Terminals :
2
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
28 ns
Packaging :
Tube
Case Connection :
DRAIN
Continuous Drain Current (ID) :
1.4A
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1 Channel
Mount :
Surface Mount
Datasheets
IXTA1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA1R4N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTA1R4N100P pinout, IXTA1R4N100P datasheet PDF, IXTA1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA1R4N100P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 450pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.4A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.1.4 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTA1R4N100P Applications


There are a lot of IXYS
IXTA1R4N100P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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