IXTA1R4N100P
- Mfr.Part #
- IXTA1R4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.4A TO263
- Stock
- 110
- In Stock :
- 110
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Power Dissipation :
- 63W
- DS Breakdown Voltage-Min :
- 1000 V
- Published :
- 2011
- Power Dissipation-Max :
- 63W Tc
- Power Dissipation-Max (Abs) :
- 63 W
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSSO-G2
- Product Type :
- MOSFET
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 1kV
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Mounting Style :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Series :
- Polar™
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 3A
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 17.8nC @ 10V
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 500mA, 10V
- Length :
- 10.41 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 11 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Base Product Number :
- IXTA1
- Power Dissipation (Max) :
- 63W (Tc)
- Pin Count :
- 4
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 1.4 A
- JEDEC-95 Code :
- TO-263AB
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- not_compliant
- Supplier Device Package :
- TO-263 (IXTA)
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- Gull wing
- Rise Time :
- 35ns
- Product Status :
- Active
- Factory Lead Time :
- 28 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 1000V
- Turn-Off Delay Time :
- 65 ns
- Width :
- 9.65 mm
- Height :
- 4.83 mm
- Number of Terminals :
- 2
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 28 ns
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 1.4A
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 1 Channel
- Mount :
- Surface Mount
- Datasheets
- IXTA1R4N100P

N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1R4N100P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 450pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.4A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.1.4 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA1R4N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTA1R4N100P Applications
There are a lot of IXYS
IXTA1R4N100P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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