IXKH35N60C5
- Mfr.Part #
- IXKH35N60C5
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 35A TO247AD
- Stock
- 22,611
- In Stock :
- 22,611
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Base Product Number :
- IXKH35
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 100V
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- RoHS :
- Details
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-247AD
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 5 ns
- Series :
- CoolMOS™
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±20V
- Width :
- 5.3 mm
- Power Dissipation (Max) :
- --
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Height :
- 21.45 mm
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 600V
- Published :
- 2009
- Continuous Drain Current (ID) :
- 35A
- Power Dissipation :
- 357W
- Resistance :
- 100MOhm
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Tradename :
- CoolMOS
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3.9V @ 1.2mA
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Package / Case :
- TO-3P-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 5ns
- Factory Lead Time :
- 20 Weeks
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Supplier Device Package :
- TO-247AD (IXKH)
- Type :
- CoolMOS Power MOSFET
- FET Feature :
- Super Junction
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Length :
- 16.24 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 18A, 10V
- Drain to Source Breakdown Voltage :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXKH35N60C5
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N-Channel Tube 100m Ω @ 18A, 10V ±20V 2800pF @ 100V 70nC @ 10V 600V TO-3P-3 Full Pack
IXKH35N60C5 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 800 mJ.A device's maximal input capacitance is 2800pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXKH35N60C5 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 600V voltage
a 600V drain to source voltage (Vdss)
IXKH35N60C5 Applications
There are a lot of IXYS
IXKH35N60C5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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