IXFP5N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Power Dissipation-Max (Abs) :

250 W

Max Operating Temperature :

150 °C

Drain to Source Resistance :

2.8 Ω

Pbfree Code :

yes

Base Product Number :

IXFP5N100

Gate Charge (Qg) (Max) @ Vgs :

33.4nC @ 10V

Power Dissipation (Max) :

250W (Tc)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

Configuration :

Single

Continuous Drain Current (ID) :

5A

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Supplier Device Package :

TO-220-3

Min Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

10 A

Series :

HiPerFET™, PolarP2™

DS Breakdown Voltage-Min :

1000 V

Channel Type :

N Channel

Drain Current-Max (Abs) (ID) :

5A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

6V @ 250μA

Case Connection :

DRAIN

Pin Count :

3

Number of Elements :

1

Power Dissipation :

250W

Continuous Drain Current Id :

5A

Avalanche Energy Rating (Eas) :

300 mJ

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

26 Weeks

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Brand :

IXYS

Drain to Source Voltage (Vdss) :

1000V

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Input Capacitance :

1.83 nF

Channel Mode :

Enhancement

RoHS :

Details

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Transistor Polarity :

N-Channel

Power Dissipation-Max :

250W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Package / Case :

TO-220-3

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

2.8 Ω

Gate to Source Voltage (Vgs) :

30V

Product Type :

MOSFET

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Max Power Dissipation :

250 W

Product Category :

MOSFET

FET Feature :

-

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

1kV

Rds On Max :

2.8 Ω

Tradename :

HiPerFET

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

FET Type :

N-Channel

Published :

2008

JESD-609 Code :

e1

Number of Terminations :

3

Qualification :

-

Element Configuration :

Single

Vgs (Max) :

±30V

Manufacturer :

IXYS

Number of Channels :

1 Channel