IXFP16N50P

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Mfr.Part #
IXFP16N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
3,401
In Stock :
3,401

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
300W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Transistor Application :
SWITCHING
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-220AB
Turn-Off Delay Time :
70 ns
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
16A
JESD-609 Code :
e3
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
300W (Tc)
Pbfree Code :
yes
Manufacturer :
IXYS
Element Configuration :
Single
Lead Free :
Lead Free
RoHS :
Details
Vgs (Max) :
±30V
Product Status :
Active
Avalanche Energy Rating (Eas) :
750 mJ
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
35 A
Number of Terminals :
3
Drain to Source Breakdown Voltage :
500V
DS Breakdown Voltage-Min :
500 V
Number of Channels :
1 Channel
Base Product Number :
IXFP16
Package Shape :
RECTANGULAR
Pin Count :
3
Power Dissipation :
300W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Product Type :
MOSFET
Package / Case :
TO-220-3
Maximum Operating Temperature :
+ 150 C
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
26 Weeks
Terminal Form :
THROUGH-HOLE
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
Power Dissipation-Max (Abs) :
300 W
Resistance :
400mOhm
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Length :
10.66 mm
Mount :
Through Hole
Voltage - Rated DC :
500V
Rise Time :
25ns
Fall Time (Typ) :
22 ns
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Rds On (Max) @ Id, Vgs :
400m Ω @ 8A, 10V
Width :
4.83 mm
Supplier Device Package :
TO-220AB
Current Rating :
16A
Drain-source On Resistance-Max :
0.4 Ω
Channel Mode :
Enhancement
Radiation Hardening :
No
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Package :
Tube
Configuration :
Single
Case Connection :
DRAIN
Series :
HiPerFET™, PolarHT™
Surface Mount :
No
Number of Elements :
1
Height :
9.15 mm
Packaging :
Tube
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
16 A
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Mounting Type :
Through Hole
Datasheets
IXFP16N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP16N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFP16N50P pinout, IXFP16N50P datasheet PDF, IXFP16N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP16N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP16N50P


N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-220-3

IXFP16N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The maximum input capacitance of this device is 2250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 16 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 35 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFP16N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXFP16N50P Applications


There are a lot of IXYS
IXFP16N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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