IXFP16N50P
- Mfr.Part #
- IXFP16N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 3,401
- In Stock :
- 3,401
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 300W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Application :
- SWITCHING
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 70 ns
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 16A
- JESD-609 Code :
- e3
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- RoHS :
- Details
- Vgs (Max) :
- ±30V
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFP16
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Power Dissipation :
- 300W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Product Type :
- MOSFET
- Package / Case :
- TO-220-3
- Maximum Operating Temperature :
- + 150 C
- Terminal Finish :
- Matte Tin (Sn)
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 26 Weeks
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2006
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 300 W
- Resistance :
- 400mOhm
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 10.66 mm
- Mount :
- Through Hole
- Voltage - Rated DC :
- 500V
- Rise Time :
- 25ns
- Fall Time (Typ) :
- 22 ns
- Tradename :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 8A, 10V
- Width :
- 4.83 mm
- Supplier Device Package :
- TO-220AB
- Current Rating :
- 16A
- Drain-source On Resistance-Max :
- 0.4 Ω
- Channel Mode :
- Enhancement
- Radiation Hardening :
- No
- Transistor Polarity :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Package :
- Tube
- Configuration :
- Single
- Case Connection :
- DRAIN
- Series :
- HiPerFET™, PolarHT™
- Surface Mount :
- No
- Number of Elements :
- 1
- Height :
- 9.15 mm
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 16 A
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Mounting Type :
- Through Hole
- Datasheets
- IXFP16N50P

N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-220-3
IXFP16N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The maximum input capacitance of this device is 2250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 16 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 35 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFP16N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXFP16N50P Applications
There are a lot of IXYS
IXFP16N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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