IXFN132N50P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Number of Elements per Chip :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5kW

Type :

HiPerFET

Height :

9.6mm

Package Type :

SOT-227

Power Dissipation-Max :

1500W Tc

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Element Configuration :

Single

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 8mA

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

38.23mm

Current - Continuous Drain (Id) @ 25°C :

112A Tc

RoHS :

Details

Package :

Tube

Product :

Power MOSFET Modules

Terminal Position :

UPPER

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Number of Elements :

1

Number of Channels :

1 Channel

Base Product Number :

IXFN132

Terminal Form :

UNSPECIFIED

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Brand :

IXYS

Continuous Drain Current Id :

112A

Reach Compliance Code :

Unknown

Transistor Polarity :

N-Channel

Series :

HiPerFET™, Polar3™

Vgs (Max) :

±30V

FET Type :

N-Channel

Mount :

Chassis Mount, Panel

Channel Mode :

Enhancement

Factory Lead Time :

20 Weeks

Minimum Operating Temperature :

-55 °C

Fall Time (Typ) :

8 ns

Channel Type :

N

Input Capacitance (Ciss) (Max) @ Vds :

18600pF @ 25V

Pin Count :

4

Rise Time :

9ns

Configuration :

Single

Power Dissipation (Max) :

1500W (Tc)

Product Type :

Discrete Semiconductor Modules

Width :

25.07mm

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

72 ns

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

330A

Product Category :

Discrete Semiconductor Modules

RoHS Status :

ROHS3 Compliant

Mounting Style :

Screw Mounts

Resistance :

39mOhm

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

3000 mJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

39m Ω @ 66A, 10V

Turn On Delay Time :

44 ns

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Number of Terminations :

4

Number of Pins :

4

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

112A

Product Status :

Active

FET Feature :

--

Drain to Source Voltage (Vdss) :

500V

Supplier Device Package :

SOT-227B

Packaging :

Tube

Maximum Operating Temperature :

+150 °C

Package / Case :

SOT-227-4, miniBLOC