IXFK15N100Q

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Mfr.Part #
IXFK15N100Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 15A TO264AA
Stock
47,575
In Stock :
47,575

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Avalanche Energy Rating (Eas) :
1500 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Drain to Source Voltage (Vdss) :
1000V
Rds On (Max) @ Id, Vgs :
700m Ω @ 500mA, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Obsolete
Drain to Source Breakdown Voltage :
1kV
Fall Time (Typ) :
14 ns
Turn-Off Delay Time :
67 ns
Max Operating Temperature :
150 °C
Element Configuration :
Single
Max Power Dissipation :
360 W
Package / Case :
TO-264-3, TO-264AA
Qualification Status :
Not Qualified
Number of Terminals :
3
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
1000 V
Mount :
Through Hole
Base Product Number :
IXFK15
Continuous Drain Current (ID) :
15A
Pulsed Drain Current-Max (IDM) :
60A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Pbfree Code :
yes
JEDEC-95 Code :
TO-264
Input Capacitance :
4.5 nF
Series :
HiPerFET™
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Packaging :
Tube
Pin Count :
3
Vgs(th) (Max) @ Id :
5V @ 4mA
Manufacturer :
IXYS Corporation
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
20V
Drain to Source Resistance :
700 mΩ
Rds On Max :
700 mΩ
Number of Terminations :
3
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Package :
Tube
Power Dissipation :
360W
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Supplier Device Package :
TO-264AA (IXFK)
Power Dissipation-Max :
360W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.725Ohm
Terminal Position :
Single
Case Connection :
DRAIN
Mounting Type :
Through Hole
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Rise Time :
27ns
Power Dissipation (Max) :
360W (Tc)
Published :
2003
RoHS Status :
RoHS Compliant
Datasheets
IXFK15N100Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK15N100Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXFK15N100Q pinout, IXFK15N100Q datasheet PDF, IXFK15N100Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK15N100Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK15N100Q


N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA

IXFK15N100Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 700 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK15N100Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 67 ns
based on its rated peak drain current 60A.
single MOSFETs transistor is 700 mΩ
a 1000V drain to source voltage (Vdss)


IXFK15N100Q Applications


There are a lot of IXYS
IXFK15N100Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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