IXFK15N100Q
- Mfr.Part #
- IXFK15N100Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 15A TO264AA
- Stock
- 47,575
- In Stock :
- 47,575
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Drain to Source Voltage (Vdss) :
- 1000V
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 500mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Obsolete
- Drain to Source Breakdown Voltage :
- 1kV
- Fall Time (Typ) :
- 14 ns
- Turn-Off Delay Time :
- 67 ns
- Max Operating Temperature :
- 150 °C
- Element Configuration :
- Single
- Max Power Dissipation :
- 360 W
- Package / Case :
- TO-264-3, TO-264AA
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 1000 V
- Mount :
- Through Hole
- Base Product Number :
- IXFK15
- Continuous Drain Current (ID) :
- 15A
- Pulsed Drain Current-Max (IDM) :
- 60A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-264
- Input Capacitance :
- 4.5 nF
- Series :
- HiPerFET™
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Packaging :
- Tube
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Manufacturer :
- IXYS Corporation
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 700 mΩ
- Rds On Max :
- 700 mΩ
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Power Dissipation :
- 360W
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation-Max :
- 360W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.725Ohm
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Rise Time :
- 27ns
- Power Dissipation (Max) :
- 360W (Tc)
- Published :
- 2003
- RoHS Status :
- RoHS Compliant
- Datasheets
- IXFK15N100Q

N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA
IXFK15N100Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 700 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK15N100Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 67 ns
based on its rated peak drain current 60A.
single MOSFETs transistor is 700 mΩ
a 1000V drain to source voltage (Vdss)
IXFK15N100Q Applications
There are a lot of IXYS
IXFK15N100Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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