IXFH75N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Voltage - Rated DC :

100V

Power Dissipation-Max :

300W Tc

Current Rating :

75A

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Type :

Through Hole

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Product Status :

Not For New Designs

Package Shape :

RECTANGULAR

Base Product Number :

IXFH75

Pulsed Drain Current-Max (IDM) :

300 A

Tradename :

HyperFET

Package :

Tube

Threshold Voltage :

4V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™

Vgs(th) (Max) @ Id :

4V @ 4mA

Number of Terminations :

3

Drain-source On Resistance-Max :

0.02 Ω

Rise Time :

60ns

Radiation Hardening :

No

Surface Mount :

No

Manufacturer :

IXYS

Mount :

Through Hole

DS Breakdown Voltage-Min :

100 V

Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Power Dissipation Ambient-Max :

300 W

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Supplier Device Package :

TO-247AD (IXFH)

Reach Compliance Code :

Compliant

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

RoHS :

Details

Turn-Off Delay Time :

80 ns

Length :

16.26 mm

Transistor Type :

1 N-Channel

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Height :

21.46 mm

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Power Dissipation :

300W

Mounting Style :

Through Hole

Packaging :

Tube

Channel Mode :

Enhancement

FET Feature :

--

Rds On (Max) @ Id, Vgs :

20m Ω @ 37.5A, 10V

Pin Count :

3

Brand :

IXYS

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Number of Pins :

3

Power Dissipation-Max (Abs) :

300 W

Continuous Drain Current (ID) :

75A

Element Configuration :

Single

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Fall Time (Typ) :

60 ns

Power Dissipation (Max) :

300W (Tc)

ECCN Code :

EAR99

Resistance :

20mOhm

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

75 A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Published :

2000

Width :

5.3 mm

Number of Terminals :

3

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-247

Dual Supply Voltage :

100V