IS46DR16320D-25DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

I/O Type :

COMMON

Voltage - Supply :

1.7V~1.9V

Qualification Status :

Not Qualified

Packaging :

Tray

Output Characteristics :

3-STATE

Density :

512 Mb

Number of Terminations :

84

Clock Frequency :

400MHz

Surface Mount :

yes

Memory Type :

Volatile

Memory Interface :

Parallel

Memory Size :

512Mb 32M x 16

Supply Voltage-Max (Vsup) :

1.9V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Functions :

1

Memory Format :

DRAM

Operating Supply Voltage :

1.8V

Operating Mode :

SYNCHRONOUS

Sequential Burst Length :

48

Interleaved Burst Length :

48

Supply Voltage :

1.8V

Package / Case :

84-TFBGA

JESD-30 Code :

R-PBGA-B84

Memory Width :

16

Organization :

32MX16

Access Time :

400ps

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Standby Current-Max :

0.025A

Supply Voltage-Min (Vsup) :

1.7V

Number of Ports :

1

Address Bus Width :

13b

Additional Feature :

PROGRAMMABLE CAS LATENCY

Supply Current-Max :

0.25mA

Terminal Pitch :

0.8mm

Height Seated (Max) :

1.2mm

HTS Code :

8542.32.00.28

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~105°C TA

ECCN Code :

EAR99

Refresh Cycles :

8192

Length :

12.5mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED