IS43DR81280C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Power Supplies :

1.8V

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

1.9V

Width :

8mm

Number of Functions :

1

Interleaved Burst Length :

48

Mounting Type :

Surface Mount

Output Characteristics :

3-STATE

Package / Case :

60-TFBGA

I/O Type :

COMMON

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Packaging :

Tray

Write Cycle Time - Word, Page :

15ns

JESD-609 Code :

e1

Supply Voltage :

1.8V

Memory Size :

1Gb 128M x 8

Supply Voltage-Min (Vsup) :

1.7V

ECCN Code :

EAR99

Voltage - Supply :

1.7V~1.9V

Memory Width :

8

Factory Lead Time :

8 Weeks

Operating Temperature :

0°C~85°C TC

Memory Density :

1073741824 bit

Number of Ports :

1

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

60

Height Seated (Max) :

1.2mm

Qualification Status :

Not Qualified

Additional Feature :

AUTO/SELF REFRESH

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Access Time :

450ps

Sequential Burst Length :

48

Terminal Finish :

TIN SILVER COPPER

Refresh Cycles :

8192

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

10

Memory Type :

Volatile

Terminal Position :

BOTTOM

JESD-30 Code :

R-PBGA-B60

Clock Frequency :

333MHz

Supply Current-Max :

0.27mA

Length :

10.5mm

Surface Mount :

yes

Organization :

128MX8