IRLS4030PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Power Dissipation-Max :

370W Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

74 ns

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

100V

Turn-Off Delay Time :

110 ns

Mount :

Surface Mount

Rise Time :

330ns

Packaging :

Tube

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.5V

Published :

2009

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

2.5 V

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Height :

4.572mm

Continuous Drain Current (ID) :

190A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

4.3mOhm

Vgs (Max) :

±16V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Fall Time (Typ) :

170 ns

Element Configuration :

Single

Power Dissipation :

370W

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

11360pF @ 50V

Length :

10.668mm

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 110A, 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Terminal Form :

Gull wing