IRLR7833TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Threshold Voltage :

2.3V

Height :

2.3876mm

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

2.3 V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

6.7056mm

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

JESD-609 Code :

e3

Published :

2004

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Voltage - Rated DC :

30V

Current Rating :

98A

Number of Pins :

3

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn-Off Delay Time :

23 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 15A, 10V

Terminal Form :

Gull wing

Rise Time :

6.9ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

560A

Power Dissipation-Max :

140W Tc

Continuous Drain Current (ID) :

140A

Mount :

Surface Mount

Lead Free :

Contains Lead, Lead Free

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Power Dissipation :

140W

Dual Supply Voltage :

30V

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4010pF @ 15V

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Resistance :

4.5mOhm

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Series :

HEXFET®

Termination :

SMD/SMT