IRLR7821TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-251AA

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation-Max :

75W Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.01Ohm

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

230 mJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

10m Ω @ 15A, 10V

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

260A

Transistor Application :

SWITCHING

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSIP-T3

Published :

2004

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

65A