IRLR3636TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

69 ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

43 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

143W Tc

ECCN Code :

EAR99

Lead Free :

Lead Free

Current :

50A

Width :

6.22mm

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

143W

Turn On Delay Time :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

2.52mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Max Junction Temperature (Tj) :

175°C

Number of Channels :

1

Terminal Form :

Gull wing

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

HEXFET®

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

2

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

99A

Voltage :

60V

Length :

6.7056mm

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

Published :

2009

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Number of Pins :

3

Rise Time :

216ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Threshold Voltage :

2.5V