IRL640L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Max Power Dissipation :

3.1W

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

17A

Drain-source On Resistance-Max :

0.18ohm

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

580 mJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 5V

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Terminal Position :

Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

68A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Case Connection :

DRAIN