IRL3103PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Power Dissipation-Max :

94W Tc

ECCN Code :

EAR99

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Rise Time :

120ns

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Turn-Off Delay Time :

14 ns

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

9.1 ns

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Width :

4.69mm

REACH SVHC :

No SVHC

Element Configuration :

Single

Resistance :

12mOhm

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Transistor Application :

SWITCHING

Lead Free :

Contains Lead, Lead Free

Nominal Vgs :

1 V

Voltage - Rated DC :

30V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Published :

2001

Number of Pins :

3

Height :

15.24mm

Power Dissipation :

83W

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

64A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

16V

Pulsed Drain Current-Max (IDM) :

220A

Radiation Hardening :

No

Length :

10.5156mm

Number of Elements :

1

Current Rating :

64A

Case Connection :

DRAIN

Lead Pitch :

2.54mm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Turn On Delay Time :

8.9 ns

Termination :

Through Hole

Dual Supply Voltage :

30V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Drain Current-Max (Abs) (ID) :

56A