IRGSL10B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

5.5V

Mount :

Through Hole

Length :

10.668mm

Collector Emitter Saturation Voltage :

2.2V

Max Collector Current :

22A

Rise Time-Max :

28ns

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

2.2V

JESD-609 Code :

e3

Published :

2004

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Width :

4.826mm

Reverse Recovery Time :

90 ns

Number of Elements :

1

Gate Charge :

38nC

Power Dissipation :

156W

Mounting Type :

Through Hole

Switching Energy :

140μJ (on), 250μJ (off)

Number of Pins :

3

Factory Lead Time :

16 Weeks

IGBT Type :

NPT

RoHS Status :

RoHS Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Element Configuration :

Single

Turn On Time :

50 ns

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 10A

Test Condition :

400V, 10A, 47 Ω, 15V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

Motor Control

Number of Terminations :

3

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

30ns/230ns

Current - Collector Pulsed (Icm) :

44A

Weight :

2.084002g

Input Type :

Standard

Height :

9.652mm

Turn Off Time-Nom (toff) :

276 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Power Dissipation :

156W

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube