IRGB4064DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Test Condition :

400V, 10A, 22 Ω, 15V

Current - Collector Pulsed (Icm) :

40A

Weight :

6.000006g

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Height :

9.02mm

Mounting Type :

Through Hole

IGBT Type :

Trench

Width :

4.82mm

Mount :

Through Hole

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

27ns/79ns

Max Collector Current :

20A

Switching Energy :

29μJ (on), 200μJ (off)

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Saturation Voltage :

1.6V

Vce(on) (Max) @ Vge, Ic :

1.91V @ 15V, 10A

Power Dissipation :

101W

Number of Terminations :

3

Reverse Recovery Time :

62 ns

Turn Off Time-Nom (toff) :

131 ns

Turn-Off Delay Time :

79 ns

Packaging :

Tube

Factory Lead Time :

99 Weeks

Number of Elements :

1

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

600V

Element Configuration :

Single

Turn On Delay Time :

27 ns

Termination :

Through Hole

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Collector Emitter Voltage (VCEO) :

1.91V

Gate Charge :

21nC

Input Type :

Standard

Case Connection :

COLLECTOR

Max Power Dissipation :

101W

Rise Time :

15ns

Transistor Element Material :

SILICON

Length :

10.66mm

Turn On Time :

43 ns

ECCN Code :

EAR99

Number of Pins :

3

RoHS Status :

RoHS Compliant

Published :

2006