IRGB4062DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Trench

Element Configuration :

Single

Number of Terminations :

3

Width :

4.82mm

Turn On Time :

64 ns

Published :

2006

Package / Case :

TO-220-3

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Gate Charge :

50nC

Case Connection :

COLLECTOR

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

1.95V

Number of Pins :

3

Max Power Dissipation :

250W

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

6.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Height :

9.02mm

Switching Energy :

115μJ (on), 600μJ (off)

Packaging :

Tube

Rise Time :

22ns

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Reverse Recovery Time :

89 ns

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Radiation Hardening :

No

Max Collector Current :

48A

Factory Lead Time :

26 Weeks

Turn On Delay Time :

53 ns

Td (on/off) @ 25°C :

41ns/104ns

Length :

10.6426mm

Fall Time-Max (tf) :

41ns

Weight :

6.000006g

Turn Off Time-Nom (toff) :

164 ns

Turn-Off Delay Time :

115 ns

RoHS Status :

ROHS3 Compliant

Test Condition :

400V, 24A, 10 Ω, 15V

Polarity/Channel Type :

N-Channel

Power Dissipation :

250W

Collector Emitter Saturation Voltage :

1.65V

Current - Collector Pulsed (Icm) :

72A

ECCN Code :

EAR99