IRG4PH50SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Continuous Drain Current (ID) :

57A

Turn On Delay Time :

32 ns

Collector Emitter Breakdown Voltage :

1.2kV

Transistor Element Material :

SILICON

Number of Terminations :

3

Termination :

Through Hole

Turn-Off Delay Time :

845 ns

Continuous Collector Current :

57A

Number of Pins :

3

Element Configuration :

Single

Case Connection :

COLLECTOR

Power Dissipation :

200W

Input Capacitance :

3.6nF

Published :

2004

Rise Time :

29ns

Current - Collector Pulsed (Icm) :

114A

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 33A

Turn On Time :

62 ns

Width :

5.3mm

Packaging :

Bulk

Factory Lead Time :

14 Weeks

Input Type :

Standard

Collector Emitter Saturation Voltage :

1.75V

Collector Emitter Voltage (VCEO) :

1.2kV

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-247AC

Test Condition :

960V, 33A, 5 Ω, 15V

Mount :

Through Hole

Td (on/off) @ 25°C :

32ns/845ns

Current Rating :

57A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Package / Case :

TO-247-3

Max Junction Temperature (Tj) :

150°C

Height :

24.99mm

Length :

15.875mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200W

Lead Free :

Lead Free

Gate Charge :

167nC

Radiation Hardening :

No

Transistor Application :

POWER CONTROL

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Weight :

38.000013g

Turn Off Time-Nom (toff) :

2170 ns

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

1.2kV

Switching Energy :

1.8mJ (on), 19.6mJ (off)

Max Collector Current :

57A

ECCN Code :

EAR99