IRG4PC40FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

REACH SVHC :

No SVHC

Switching Energy :

370μJ (on), 1.81mJ (off)

Polarity/Channel Type :

N-Channel

Gate Charge :

100nC

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Height :

20.7mm

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

6V

Number of Elements :

1

Turn-Off Delay Time :

240 ns

Max Power Dissipation :

160W

Power Dissipation :

160W

Published :

2000

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Number of Terminations :

3

Rise Time :

18ns

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Width :

5.3086mm

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.5V

JEDEC-95 Code :

TO-247AC

Lead Free :

Lead Free

Current Rating :

49A

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Test Condition :

480V, 27A, 10 Ω, 15V

Collector Emitter Voltage (VCEO) :

1.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

690 ns

Turn On Delay Time :

26 ns

Max Collector Current :

49A

Element Configuration :

Dual

Turn On Time :

46 ns

Termination :

Through Hole

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

200A

Collector Emitter Breakdown Voltage :

600V

Radiation Hardening :

No

Number of Pins :

3

Terminal Position :

Single

Length :

15.87mm

Packaging :

Bulk

Td (on/off) @ 25°C :

26ns/240ns