IRG4IBC30FDPBF

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Mfr.Part #
IRG4IBC30FDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 600V 20.3A 45W TO220FP
Stock
13,334
In Stock :
13,334

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
RoHS Status :
RoHS Compliant
Supplier Device Package :
TO-220AB Full-Pak
Rise Time :
26ns
Package / Case :
TO-220-3 Full Pack
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
600V
Collector Emitter Breakdown Voltage :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
20.3A
Reverse Recovery Time :
42 ns
Published :
2004
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 17A
Turn-Off Delay Time :
310 ns
Test Condition :
480V, 17A, 23Ohm, 15V
Turn On Delay Time :
42 ns
Packaging :
Tube
Max Operating Temperature :
150°C
Max Power Dissipation :
45W
Power Dissipation :
45W
Radiation Hardening :
No
Td (on/off) @ 25°C :
42ns/230ns
Collector Emitter Saturation Voltage :
1.8V
Number of Pins :
3
Mount :
Through Hole
Power - Max :
45W
Current - Collector (Ic) (Max) :
20.3A
Collector Emitter Voltage (VCEO) :
1.8V
Max Collector Current :
20.3A
Mounting Type :
Through Hole
Element Configuration :
Single
Lead Free :
Lead Free
Voltage - Rated DC :
600V
Gate Charge :
51nC
Switching Energy :
630μJ (on), 1.39mJ (off)
Current - Collector Pulsed (Icm) :
120A
Input Type :
Standard
Min Operating Temperature :
-55°C
Datasheets
IRG4IBC30FDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4IBC30FDPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, IRG4IBC30FDPBF pinout, IRG4IBC30FDPBF datasheet PDF, IRG4IBC30FDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4IBC30FDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4IBC30FDPBF


IRG4IBC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4IBC30FDPBF  Features

Very Low 1 59V voltage drop

2. 5kV, 60s insulation voltage日

4.8 mm creepage distance to the heatsink

Fast Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

IGBT co packaged with HEXFREDTM ultrafast,

ultrasoft recovery antiparallel diodes

Tighter parameter distribution

Industry-standard Isolated TO-220 FullpakTM

outline



IRG4IBC30FDPBF  Benefits

Simplified assembly

Highest efficiency and power density

HEXFREDTM antiparallel Diode minimizes

switching losses and EMI

Lead-Free



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