IRG4IBC20UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6V

Termination :

Through Hole

REACH SVHC :

No SVHC

Input Type :

Standard

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

39ns/93ns

Turn On Time :

55 ns

Current Rating :

11.4A

Power Dissipation :

34W

Width :

4.826mm

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

600V

Max Power Dissipation :

34W

Fall Time-Max (tf) :

170ns

Length :

10.7442mm

Package / Case :

TO-220-3 Full Pack

Gate Charge :

27nC

Reverse Recovery Time :

37 ns

Number of Terminations :

3

Case Connection :

Isolated

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

ECCN Code :

EAR99

Height :

16.129mm

Mount :

Through Hole

Current - Collector Pulsed (Icm) :

52A

Published :

2003

Element Configuration :

Single

Number of Elements :

1

Turn Off Time-Nom (toff) :

320 ns

Weight :

2.299997g

Collector Emitter Breakdown Voltage :

600V

Lead Free :

Lead Free

Packaging :

Tube

Switching Energy :

160μJ (on), 130μJ (off)

Number of Pins :

3

Rise Time :

17ns

Factory Lead Time :

16 Weeks

Test Condition :

480V, 6.5A, 50 Ω, 15V

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

2.1V

Collector Emitter Voltage (VCEO) :

2.1V

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

11.4A