IRG4BC40FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Max Collector Current :

49A

Current - Collector Pulsed (Icm) :

196A

Published :

2000

Polarity/Channel Type :

N-Channel

Power Dissipation :

160W

Collector Emitter Saturation Voltage :

1.7V

Max Power Dissipation :

160W

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

1.7V

Mount :

Through Hole

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

690 ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.54mm

Test Condition :

480V, 27A, 10 Ω, 15V

Width :

4.69mm

Package / Case :

TO-220-3

Input Type :

Standard

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Number of Pins :

3

Transistor Application :

POWER CONTROL

Additional Feature :

FAST SWITCHING

Radiation Hardening :

No

Mounting Type :

Through Hole

Height :

8.77mm

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Switching Energy :

370μJ (on), 1.81mJ (off)

Td (on/off) @ 25°C :

26ns/240ns

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

100nC

Termination :

Through Hole

Case Connection :

COLLECTOR

Terminal Position :

Single

Current Rating :

49A

Gate-Emitter Voltage-Max :

20V

Rise Time :

18ns

Turn On Time :

46 ns

Voltage - Rated DC :

600V

Number of Elements :

1

Element Configuration :

Dual

Turn-Off Delay Time :

240 ns

Packaging :

Tube

Turn On Delay Time :

26 ns

Weight :

6.000006g

Factory Lead Time :

16 Weeks