IRFZ48RPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Mounting Type :

Through Hole

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

60V

JEDEC-95 Code :

TO-220AB

Additional Feature :

AVALANCHE RATED

Number of Channels :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

250 ns

Turn On Delay Time :

8.1 ns

Turn-Off Delay Time :

210 ns

Pulsed Drain Current-Max (IDM) :

290A

RoHS Status :

ROHS3 Compliant

Current Rating :

50A

Mount :

Through Hole

Power Dissipation :

190W

Recovery Time :

180 ns

Length :

10.41mm

Voltage - Rated DC :

60V

Power Dissipation-Max :

190W Tc

Lead Free :

Lead Free

Continuous Drain Current (ID) :

50A

Package / Case :

TO-220-3

Number of Terminations :

3

Element Configuration :

Single

Pbfree Code :

yes

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Weight :

6.000006g

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Pins :

3

Pin Count :

3

Width :

4.7mm

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

18m Ω @ 43A, 10V

ECCN Code :

EAR99

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

8 Weeks

Packaging :

Tube

Height :

9.01mm

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

250ns

Number of Elements :

1