IRFZ48R
- Mfr.Part #
- IRFZ48R
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220AB
- Stock
- 43,952
- In Stock :
- 43,952
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 50A
- Rise Time :
- 250ns
- Power Dissipation-Max :
- 190W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Width :
- 4.7mm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Weight :
- 6.000006g
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Turn On Delay Time :
- 8.1 ns
- Input Capacitance :
- 2.4nF
- Supplier Device Package :
- TO-220AB
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 175°C
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 18 mΩ
- Height :
- 9.01mm
- Fall Time (Typ) :
- 250 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 60V
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 3
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.41mm
- Current Rating :
- 50A
- Drain to Source Resistance :
- 18mOhm
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Mounting Type :
- Through Hole
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 43A, 10V
- Turn-Off Delay Time :
- 210 ns
- Element Configuration :
- Single
- Number of Channels :
- 1
- Published :
- 2011
- Power Dissipation :
- 190W
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IRFZ48R
N-Channel Tube 18mOhm @ 43A, 10V ±20V 2400pF @ 25V 110nC @ 10V 60V TO-220-3
IRFZ48R Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2400pF @ 25V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 210 ns.MOSFETs have 18mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFZ48R Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 210 ns
single MOSFETs transistor is 18mOhm
a 60V drain to source voltage (Vdss)
IRFZ48R Applications
There are a lot of Vishay Siliconix
IRFZ48R applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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