IRFZ30PBF

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Mfr.Part #
IRFZ30PBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 50V 30A TO220AB
Stock
2,161
In Stock :
2,161

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
74W Tc
Number of Pins :
3
Package / Case :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2000
Radiation Hardening :
No
Turn-Off Delay Time :
23 ns
Threshold Voltage :
4V
Continuous Drain Current (ID) :
30A
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
50V
Supplier Device Package :
TO-220AB
Drain to Source Resistance :
50mOhm
Element Configuration :
Single
REACH SVHC :
Unknown
Packaging :
Tube
FET Type :
N-Channel
Resistance :
50mOhm
Rise Time :
16ns
Lead Free :
Lead Free
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
50V
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Rds On Max :
50 mΩ
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Rds On (Max) @ Id, Vgs :
50mOhm @ 16A, 10V
Turn On Delay Time :
12 ns
Operating Temperature :
-55°C~150°C TJ
Input Capacitance :
1.6nF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Fall Time (Typ) :
16 ns
RoHS Status :
ROHS3 Compliant
Power Dissipation :
75W
Datasheets
IRFZ30PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFZ30PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IRFZ30PBF pinout, IRFZ30PBF datasheet PDF, IRFZ30PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFZ30PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFZ30PBF


N-Channel Tube 50mOhm @ 16A, 10V ±20V 1600pF @ 25V 30nC @ 10V 50V TO-220-3

IRFZ30PBF Overview


A device's maximal input capacitance is 1600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 50V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 50mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 50V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFZ30PBF Features


a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 50mOhm
a threshold voltage of 4V
a 50V drain to source voltage (Vdss)


IRFZ30PBF Applications


There are a lot of Vishay Siliconix
IRFZ30PBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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