IRFZ24NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Resistance :

70mOhm

ECCN Code :

EAR99

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

RoHS Status :

RoHS Compliant

Current Rating :

17A

Height :

4.699mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

34ns

Case Connection :

DRAIN

Voltage - Rated DC :

55V

Number of Elements :

1

Drain to Source Breakdown Voltage :

55V

Number of Terminations :

2

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Turn On Delay Time :

4.9 ns

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2004

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Surface Mount

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

68A

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

3.8W

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

27 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

19 ns

Power Dissipation-Max :

3.8W Ta 45W Tc

Number of Pins :

3

Continuous Drain Current (ID) :

17A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

9.65mm

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ