IRFUC20
- Mfr.Part #
- IRFUC20
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2A TO251AA
- Stock
- 13,568
- In Stock :
- 13,568
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Terminal Finish :
- TIN LEAD
- Weight :
- 329.988449mg
- Avalanche Energy Rating (Eas) :
- 74 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Pin Count :
- 3
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Turn-Off Delay Time :
- 30 ns
- Drain Current-Max (Abs) (ID) :
- 2A
- Length :
- 6.73mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Fall Time (Typ) :
- 25 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Height :
- 6.22mm
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 4.4 Ω @ 1.2A, 10V
- Rise Time :
- 23ns
- Continuous Drain Current (ID) :
- 2A
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 600V
- Width :
- 2.39mm
- Turn On Delay Time :
- 10 ns
- Transistor Element Material :
- SILICON
- Published :
- 2016
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 240
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Datasheets
- IRFUC20
N-Channel Tube 4.4 Ω @ 1.2A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-251-3 Short Leads, IPak, TO-251AA
IRFUC20 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 74 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFUC20 Features
the avalanche energy rating (Eas) is 74 mJ
a continuous drain current (ID) of 2A
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
a 600V drain to source voltage (Vdss)
IRFUC20 Applications
There are a lot of Vishay Siliconix
IRFUC20 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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