IRFU6215

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1998

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

310 mJ

Power Dissipation-Max :

110W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

44A

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tube

Terminal Position :

Single

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Peak Reflow Temperature (Cel) :

245

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Vgs (Max) :

±20V

Series :

HEXFET®

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Number of Terminations :

3

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.295Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

150V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

13A

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-PSIP-T3