IRFU5305PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Fall Time (Typ) :

63 ns

Width :

2.3mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Resistance :

65mOhm

Rise Time :

66ns

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Lead Pitch :

2.28mm

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Turn On Delay Time :

14 ns

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Length :

6.6mm

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Radiation Hardening :

No

Height :

6.1mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

-4V

Turn-Off Delay Time :

39 ns

Continuous Drain Current (ID) :

-31A

Mounting Type :

Through Hole

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Nominal Vgs :

-4 V

Power Dissipation :

89W

Lead Free :

Contains Lead, Lead Free

Current Rating :

-28A

Lead Length :

9.65mm

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Contact Plating :

Tin

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Voltage - Rated DC :

-55V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

280 mJ

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

25A

Packaging :

Tube