IRFSL4227PBF
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- Mfr.Part #
- IRFSL4227PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 62A TO262
- Stock
- 13,306
- In Stock ：
- 13,306
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.65mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4.83mm
- Fall Time (Typ) :
- 31 ns
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.026ohm
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Packaging :
- Tube
- Nominal Vgs :
- 5 V
- Rise Time :
- 20ns
- Operating Temperature :
- -40°C~175°C TJ
- Radiation Hardening :
- No
- Threshold Voltage :
- 5V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 62A
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 330W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 46A, 10V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 330W
- Turn On Delay Time :
- 33 ns
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 21 ns
- Series :
- HEXFET®
- Published :
- 2008
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Pulsed Drain Current-Max (IDM) :
- 260A
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 200V
- Length :
- 10.67mm
- Datasheets
- IRFSL4227PBF
N-Channel Tube 26m Ω @ 46A, 10V ±30V 4600pF @ 25V 98nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4227PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 140 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 62A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 260A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 33 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL4227PBF Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
IRFSL4227PBF Applications
There are a lot of Infineon Technologies
IRFSL4227PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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