IRFSL3607PBF
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- Mfr.Part #
- IRFSL3607PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A TO262
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 4V
- Turn On Delay Time :
- 16 ns
- Width :
- 4.826mm
- Recovery Time :
- 50 ns
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 75V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3070pF @ 50V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 96 ns
- Continuous Drain Current (ID) :
- 80A
- Published :
- 2008
- Lead Free :
- Lead Free
- Length :
- 10.668mm
- Power Dissipation :
- 140W
- Packaging :
- Tube
- Dual Supply Voltage :
- 75V
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Series :
- HEXFET®
- Nominal Vgs :
- 4 V
- Height :
- 9.65mm
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Termination :
- Through Hole
- Rise Time :
- 110ns
- Turn-Off Delay Time :
- 43 ns
- Drain-source On Resistance-Max :
- 0.009Ohm
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 46A, 10V
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Power Dissipation-Max :
- 140W Tc
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IRFSL3607PBF
N-Channel Tube 9m Ω @ 46A, 10V ±20V 3070pF @ 50V 84nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3607PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3070pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [43 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFSL3607PBF Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V
IRFSL3607PBF Applications
There are a lot of Infineon Technologies
IRFSL3607PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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