IRFS7540PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4555pF @ 25V

Case Connection :

DRAIN

Mount :

Surface Mount

Number of Channels :

1

Fall Time (Typ) :

56 ns

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Continuous Drain Current (ID) :

110A

Packaging :

Tube

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

160W

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 65A, 10V

Number of Elements :

1

Lead Free :

Lead Free

Element Configuration :

Single

Vgs (Max) :

±20V

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

58 ns

Series :

HEXFET®, StrongIRFET™

Transistor Application :

SWITCHING

Rise Time :

76ns

Power Dissipation-Max :

160W Tc