IRFR430BTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1050 pF @ 25 V

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

14 A

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.75A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Terminals :

2

Case Connection :

DRAIN

Supplier Device Package :

TO-252-3 (DPAK)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Reach Compliance Code :

Unknown

Power Dissipation (Max) :

2.5W (Ta)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C ~ 150°C (TJ)

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

3.5A (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Manufacturer :

Rochester Electronics LLC

Technology :

MOSFET (Metal Oxide)

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

270 mJ

Drain-source On Resistance-Max :

1.5 Ω

DS Breakdown Voltage-Min :

500 V

Terminal Finish :

NOT SPECIFIED

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

33 nC @ 10 V

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

500 V

Qualification Status :

COMMERCIAL

Package :

Bulk

JEDEC-95 Code :

TO-252

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Product Status :

Active