IRFR422

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

TO-252, (D-Pak)

Terminal Form :

Gull wing

Terminal Finish :

TIN LEAD

Avalanche Energy Rating (Eas) :

210 mJ

Polarity/Channel Type :

N-Channel

Package :

Bulk

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

500 V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

50W (Tc)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

FET Feature :

-

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

Rds On (Max) @ Id, Vgs :

4Ohm @ 1.3A, 10V

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

-

Product Status :

Active

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Number of Elements :

1

Manufacturer :

Rochester Electronics LLC

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Pulsed Drain Current-Max (IDM) :

7 A

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

500 V

Drain-source On Resistance-Max :

4 Ω

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63