IRFR4105PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

68W Tc

Rds On (Max) @ Id, Vgs :

45m Ω @ 16A, 10V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

65 mJ

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

55V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Published :

1998

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Terminal Position :

Single

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

20A

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

100A

Current - Continuous Drain (Id) @ 25°C :

27A Tc

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.045Ohm